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1N5407

Part number 1N5407
Product classification Single Diodes
Manufacturer NTE Electronics, Inc
Description DIODE GEN PURP 800V 3A AXIAL
Encapsulation
Packing Bag
Quantity 240
RoHS status YES
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Total number

Quantity

Price

Total price

50

$0.2100

$10.5000

100

$0.1995

$19.9500

150

$0.1890

$28.3500

200

$0.1785

$35.7000

250

$0.1785

$44.6250

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Product parameters
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TYPEDESCRIPTION
MfrNTE Electronics, Inc
Series-
PackageBag
Product StatusACTIVE
Package / CaseDO-201AA, DO-27, Axial
Mounting TypeThrough Hole
SpeedStandard Recovery >500ns, > 200mA (Io)
TechnologyStandard
Current - Average Rectified (Io)3A
Supplier Device PackageAxial
Operating Temperature - Junction-65°C ~ 170°C
Voltage - DC Reverse (Vr) (Max)800 V
Voltage - Forward (Vf) (Max) @ If1 V @ 3 A
Current - Reverse Leakage @ Vr10 µA @ 800 V

Roving Networks (Microchip Technology)
MEMS OSC XO 133.0000MHZ CMOS SMD
Roving Networks (Microchip Technology)
MEMS OSC XO 24.5760MHZ CMOS SMD
Roving Networks (Microchip Technology)
MEMS OSC XO 100.0000MHZ LVPECL
Roving Networks (Microchip Technology)
MEMS OSC XO 125.0000MHZ LVPECL
Roving Networks (Microchip Technology)
MEMS OSCILLATOR, ULTRA LOW POWER
Roving Networks (Microchip Technology)
MEMS OSC XO 133.3330MHZ CMOS SMD
Roving Networks (Microchip Technology)
MEMS OSC XO 175.0000MHZ LVDS SMD
Roving Networks (Microchip Technology)
MEMS OSC LOW JITTER 125MHZ LVDS
Roving Networks (Microchip Technology)
MEMS OSC XO 32.0000MHZ CMOS SMD
Roving Networks (Microchip Technology)
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