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ICE20N170B

零件编号 ICE20N170B
产品分类 单 FET、MOSFET
制造商 IceMOS Technology
描述 Superjunction MOSFET
封装
包装 卷带式 (TR)
数量 1600
RoHS 状态 NO
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库存:
总数

数量

价格

总价

800

$2.5830

$2,066.4000

1600

$2.4255

$3,880.8000

2400

$2.2155

$5,317.2000

5600

$2.0370

$11,407.2000

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产品参数
PDF(1)
类型描述
制造商IceMOS Technology
系列-
包装卷带式 (TR)
产品状态ACTIVE
包装/箱TO-263-3, D2PAK (2 Leads + Tab), Variant
安装类型Surface Mount
工作温度-55°C ~ 150°C (TJ)
技术MOSFET (Metal Oxide)
场效应管类型N-Channel
电流 - 连续漏极 (Id) @ 25°C20A (Tc)
Rds On(最大)@Id、Vgs199mOhm @ 10A, 10V
功耗(最大)236W (Tc)
Vgs(th)(最大值)@Id3.9V @ 250µA
供应商设备包TO-263
驱动电压(最大导通电阻、最小导通电阻)10V
Vgs(最大)±20V
漏源电压 (Vdss)600 V
栅极电荷 (Qg)(最大值)@Vgs59 nC @ 10 V
输入电容 (Ciss)(最大值)@Vds2064 pF @ 25 V

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